Investigation of Ti, Co and Fe silicides on SIMOX materials
Lin, Chenglu, Wang, Lianwai, Zhu, Shiyang, Liu, Ping, Hemment, P. L. F. and Zou, Shichang (1995) Investigation of Ti, Co and Fe silicides on SIMOX materials 4th International Conference on Solid-State and Integrated Circuit Technology. pp. 248-252.
The fabrication of Ti, Co and Fe silicides on SIMOX materials has been investigated. These multilayer structures have been synthesized by different methods respectively. The physical properties and microstructure have been investigated. The experimental results show that TiSi2 with a low sheet resistance of 4.5Ω/□, can be formed on the thin film SIMOX. An epitaxial CoSi2 film has been obtained on SIMOX by a solid phase reaction of Co/Ti with Si overlayer of SIMOX. Semiconducting β-FeSi2 film has been synthesized on SIMOX by solid phase epitaxy.
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre|
|Date :||24 October 1995|
|Additional Information :||Lin, C., Wang, L., Zhu, S., Liu, P., Hemment, P.L.F., & Zou, S. (1995). Investigation of Ti, Co and Fe silicides on SIMOX materials. 4th International Conference on Solid-State and Integrated Circuit Technology (24-28 Oct. 1995), pp. 248 - 252. © 1995 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.|
|Depositing User :||Mr Adam Field|
|Date Deposited :||27 May 2010 14:39|
|Last Modified :||23 Sep 2013 18:32|
Actions (login required)
Downloads per month over past year