SOI device islands formed by oxygen implantation through patterned masking layers
Bussman, U., Robinson, A. K., Hemment, P. L. F. and Campisi, G. J. (1990) SOI device islands formed by oxygen implantation through patterned masking layers IEEE 1990 SOS/SOI Technology Conference . pp. 51-52.
A method of forming islands that utilizes masking layers during implantation was used. Windows in the mask define the silicon island positions. In these regions the layer structure corresponds to the conventional SIMOX structure. However, in the mask region, where the oxygen ions loose part of their kinetic energy before reaching the silicon, the buried oxide is shifted towards the surface. The aim is to achieve total dielectric isolation by implantation and annealing only, thus avoiding a subsequent LOCOS or mesa etching step. New experimental parameters, which include masking material, mask thickness and the geometry of the bevel edge, determine the structural properties of the non-planar oxide as well as the surface topology. Polycrystalline silicon masks have been successfully used to form continuous non-planar buried oxide layers. Experimental results are briefly discussed.
|Additional Information:||Bussmann, U., Robinson, A.K., Hemment, P.L.F., & Campisi, G.J. (1990). SOI device islands formed by oxygen implantation through patterned masking layers. IEEE 1990 SOS/SOI Technology Conference (2-4 Oct. 1990), pp. 51-52. © 1990 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.|
|Divisions:||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre|
|Deposited By:||Mr Adam Field|
|Deposited On:||27 May 2010 15:39|
|Last Modified:||26 Oct 2012 16:27|
Repository Staff Only: item control page