Synthesis of Si/Si1-xGex/Si heterostructures for device applications using Ge+ implantation into silicon
Nejim, A., Cristiano, F., Gwilliam, R. M., Hemment, P. L. F., Hope, D. A. O., Newey, J. and Houlton, M. R. (1996) Synthesis of Si/Si1-xGex/Si heterostructures for device applications using Ge+ implantation into silicon Proceedings of the 11th International Conference on Ion Implantation Technology .
The synthesis and doping of Si/Si1-xGex/Si heterostructures by ion implantation is being investigated as an alternative to epitaxial deposition as a means of forming heterostructures for device applications. Test structures with graded Si/Si1-xGex/Si interfaces have been formed in n-type Si wafers by the implantation of 70 keV or 140 keV Ge+ ions and doses up to 3×1016 Ge+ cm-2 to form alloy layers with peak Ge concentrations of up to 11 atomic%. BF2+ ions have been implanted to form p-type surface layers and post amorphisation, using 500 keV Si+ into cooled substrates followed by solid phase epitaxial regrowth, has been used to control End of Range (EoR) defects. TEM data from post amorphised samples reveal no extended defects within the alloy region but show a band of EoR defects buried 1 micro-m beneath the surface. The composition, microstructure and junction quality of the alloy layers are discussed to highlight the potential impact of the process on the manufacturability of advanced bipolar (HBT) devices.
|Additional Information:||Nejim, A., Cristiano, F., Gwilliam, R.M., Hemment, P.L.F., Hope, D.A.O., Newey, J., & Houlton, M.R. (1996). Synthesis of Si/Si1-xGex/Si heterostructures for device applications using Ge+ implantation into silicon Proceedings of the 11th International Conference on Ion Implantation Technology, 16-21 June 1996, pp. 41 - 44. © 1996 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.|
|Divisions:||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre|
|Deposited By:||Mr Adam Field|
|Deposited On:||27 May 2010 15:39|
|Last Modified:||26 Oct 2012 16:27|
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