University of Surrey

Test tubes in the lab Research in the ATI Dance Research

Highly conductive Sb-doped layers in strained Si

Bennett, NS, Cowern, NEB, Smith, AJ, Gwilliam, RM, Sealy, BJ, O'Reilly, L, McNally, PJ, Cooke, G and Kheyrandish, H (2006) Highly conductive Sb-doped layers in strained Si APPLIED PHYSICS LETTERS, 89 (18). ? - ?. ISSN 0003-6951


Download (79Kb)


The ability to create stable, highly conductive ultrashallow doped regions is a key requirement for future silicon-based devices. It is shown that biaxial tensile strain reduces the sheet resistance of highly doped n-type layers created by Sb or As implantation. The improvement is stronger with Sb, leading to a reversal in the relative doping efficiency of these n-type impurities. For Sb, the primary effect is a strong enhancement of activation as a function of tensile strain. At low processing temperatures, 0.7% strain more than doubles Sb activation, while enabling the formation of stable, similar to 10-nm-deep junctions. This makes Sb an interesting alternative to As for ultrashallow junctions in strain-engineered complementary metal-oxide-semiconductor devices.

Item Type: Article
Uncontrolled Keywords: Science & Technology, Physical Sciences, Physics, Applied, Physics, SILICON, DIFFUSION, JUNCTIONS, MOBILITY
Related URLs:
Divisions: Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre
Depositing User: Mr Adam Field
Date Deposited: 27 May 2010 14:06
Last Modified: 23 Sep 2013 18:26

Actions (login required)

View Item View Item


Downloads per month over past year

Information about this web site

© The University of Surrey, Guildford, Surrey, GU2 7XH, United Kingdom.
+44 (0)1483 300800