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Highly conductive Sb-doped layers in strained Si

Bennett, NS, Cowern, NEB, Smith, AJ, Gwilliam, RM, Sealy, BJ, O'Reilly, L, McNally, PJ, Cooke, G and Kheyrandish, H (2006) Highly conductive Sb-doped layers in strained Si APPLIED PHYSICS LETTERS, 89 (18). ? - ?. ISSN 0003-6951

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Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre
Authors :
AuthorsEmail
Bennett, NSUNSPECIFIED
Cowern, NEBUNSPECIFIED
Smith, AJUNSPECIFIED
Gwilliam, RMUNSPECIFIED
Sealy, BJUNSPECIFIED
O'Reilly, LUNSPECIFIED
McNally, PJUNSPECIFIED
Cooke, GUNSPECIFIED
Kheyrandish, HUNSPECIFIED
Date : 30 October 2006
Identification Number : 10.1063/1.2382741
Uncontrolled Keywords : Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, SILICON, DIFFUSION, JUNCTIONS, MOBILITY
Related URLs :
Depositing User : Mr Adam Field
Date Deposited : 27 May 2010 14:06
Last Modified : 17 Jan 2015 14:45
URI: http://epubs.surrey.ac.uk/id/eprint/126

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