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Highly conductive Sb-doped layers in strained Si

Bennett, NS, Cowern, NEB, Smith, AJ, Gwilliam, RM, Sealy, BJ, O'Reilly, L, McNally, PJ, Cooke, G and Kheyrandish, H (2006) Highly conductive Sb-doped layers in strained Si APPLIED PHYSICS LETTERS, 89 (18). ? - ?. ISSN 0003-6951

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Item Type: Article
Uncontrolled Keywords: Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, SILICON, DIFFUSION, JUNCTIONS, MOBILITY
Related URLs:
Divisions: Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre
Depositing User: Mr Adam Field
Date Deposited: 27 May 2010 14:06
Last Modified: 18 Sep 2014 01:52
URI: http://epubs.surrey.ac.uk/id/eprint/126

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