Measurement and modelling of arsenic and boron diffusion in oxygen implanted silicon-on-insulator (SOI) layers
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Godfrey, D. J., Chater, R., Robinson, A. K., Augustus, P. D., Alderman, J. R., Davis, J. R., Kilner, J. and Hemment, P. L. F. (1988) Measurement and modelling of arsenic and boron diffusion in oxygen implanted silicon-on-insulator (SOI) layers IEEE Proceedings of the 1988 SOS/SOI Technology Workshop .
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Abstract
The diffusion of arsenic and boron in oxygen-implanted SOI layers has been studied using secondary ion mass spectrometry, (SIMS), Rutherford backscattering spectroscopy (RBS), spreading resistance profiling (SRP), and transmission electron microscopy (TEM). A SIMOX (separation by implantation of oxygen) was produced, and then a 27-nm oxide layer was grown prior to implantation of either arsenic (80 keV, 5×1015 cm-2) or boron (15 keV, 2×1015 cm-2). The samples were annealed at 900°C for 10 min, 30 min, and 120 min in an inert ambient and analyzed using the above techniques. The experimental results have been compared with process modeling simulations where diffusion behavior appropriate to bulk silicon has been incorporated. It has been found that by using appropriate implant and anneal schedules it is possible to produce SIMOX material where the quality of the silicon overlayer allows the majority of diffusion behavior to be predicted using such models.
| Item Type: | Article |
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| Additional Information: | Godfrey, D.J., Chater, R., Robinson, A.K., Augustus, P.D., Alderman, J.R., Davis, J.R., Kilner, J., & Hemment, P.L.F. (1988). Measurement and modelling of arsenic and boron diffusion in oxygen implanted silicon-on-insulator (SOI) layers. IEEE Proceedings of the 1988 SOS/SOI Technology Workshop, (3-5 Oct. 1988), p. 42. © 1988 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. |
| Divisions: | Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre |
| ID Code: | 1259 |
| Deposited By: | Mr Adam Field |
| Deposited On: | 27 May 2010 15:39 |
| Last Modified: | 26 Oct 2012 16:27 |
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