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The lifetime distribution of excess carriers in H+ ion implanted silicon by photoconductive frequency resolved spectroscopy

Niby, MA, Li, DQ, Lourenco, MA, Nejim, A, Homewood, KP, Hemment, PLF, Ishidida, E, Current, M, Banerjee, S, Larson, L, Mehta, S, Tasch, A, Smith, TC and Romig, T (1997) The lifetime distribution of excess carriers in H+ ion implanted silicon by photoconductive frequency resolved spectroscopy ION IMPLANTATION TECHNOLOGY - 96. 668 - 671.

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Item Type: Article
Uncontrolled Keywords: Science & Technology, Technology, Engineering, Electrical & Electronic, Materials Science, Multidisciplinary, Engineering, Materials Science
Related URLs:
Divisions: Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre
Depositing User: Mr Adam Field
Date Deposited: 27 May 2010 14:39
Last Modified: 09 Jun 2014 13:27
URI: http://epubs.surrey.ac.uk/id/eprint/1258

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