The lifetime distribution of excess carriers in H+ ion implanted silicon by photoconductive frequency resolved spectroscopy
Niby, MA, Li, DQ, Lourenco, MA, Nejim, A, Homewood, KP, Hemment, PLF, Ishidida, E, Current, M, Banerjee, S, Larson, L, Mehta, S, Tasch, A, Smith, TC and Romig, T (1997) The lifetime distribution of excess carriers in H+ ion implanted silicon by photoconductive frequency resolved spectroscopy ION IMPLANTATION TECHNOLOGY - 96. 668 - 671.
This paper reports a photoconductive frequency resolved spectroscopy study of the excess carrier lifetime distributions in device grade silicon subjected to hydrogen implantation to achieve proximity gettering of heavy metal impurities. Carrier lifetime distributions have been obtained for various processing conditions and over a wide range of measurement temperatures. The lifetime distributions are initially complex and found to be dominated by trapping effects. Samples that have been implanted and subsequently annealed show a simpler lifetime distribution with a single carrier recombination time of 5 μS from which we conclude that significant gettering has been achieved.
|Uncontrolled Keywords:||Science & Technology, Technology, Engineering, Electrical & Electronic, Materials Science, Multidisciplinary, Engineering, Materials Science|
|Divisions:||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre|
|Depositing User:||Mr Adam Field|
|Date Deposited:||27 May 2010 14:39|
|Last Modified:||23 Sep 2013 18:32|
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