University of Surrey

Test tubes in the lab Research in the ATI Dance Research

The lifetime distribution of excess carriers in H+ ion implanted silicon by photoconductive frequency resolved spectroscopy

Niby, MA, Li, DQ, Lourenco, MA, Nejim, A, Homewood, KP, Hemment, PLF, Ishidida, E, Current, M, Banerjee, S, Larson, L, Mehta, S, Tasch, A, Smith, TC and Romig, T (1997) The lifetime distribution of excess carriers in H+ ion implanted silicon by photoconductive frequency resolved spectroscopy ION IMPLANTATION TECHNOLOGY - 96. 668 - 671.

[img]
Preview
PDF
fulltext.pdf

Download (317Kb)

Abstract

This paper reports a photoconductive frequency resolved spectroscopy study of the excess carrier lifetime distributions in device grade silicon subjected to hydrogen implantation to achieve proximity gettering of heavy metal impurities. Carrier lifetime distributions have been obtained for various processing conditions and over a wide range of measurement temperatures. The lifetime distributions are initially complex and found to be dominated by trapping effects. Samples that have been implanted and subsequently annealed show a simpler lifetime distribution with a single carrier recombination time of 5 μS from which we conclude that significant gettering has been achieved.

Item Type: Article
Uncontrolled Keywords: Science & Technology, Technology, Engineering, Electrical & Electronic, Materials Science, Multidisciplinary, Engineering, Materials Science
Related URLs:
Divisions: Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre
Depositing User: Mr Adam Field
Date Deposited: 27 May 2010 14:39
Last Modified: 23 Sep 2013 18:32
URI: http://epubs.surrey.ac.uk/id/eprint/1258

Actions (login required)

View Item View Item

Downloads

Downloads per month over past year


Information about this web site

© The University of Surrey, Guildford, Surrey, GU2 7XH, United Kingdom.
+44 (0)1483 300800