Characterization and enviromental impact of plasma products within an ion implanter
Zurrug, H, Mefo, J, Sealy, B, Boudreault, G, Jeynes, C, Webb, RP, Kirkby, KJ, Collart, EJH, Brown, B, Alford, TL, Nastasi, M and Vella, MC (2003) Characterization and enviromental impact of plasma products within an ion implanter In: 14th International Conference on Ion Implantation Technology, 2002-09-18 - 2002-09-27, TAOS, NM.
The way in which the plasma in the ion source interacts with the constituent elements of the source chamber can provide important insights into the plasma chemistry and may facilitate improvements in ion source design and operation. It is also an important parameter in determining the environmental impact of the implantation process. It is worth noting that less than 0.4% of the material placed into the ion source is actually implanted as a dopant into the target wafers; the rest remains as a solid residue or gaseous emission. As many of the materials used for dopant implantation are either highly toxic, pyrophoric, greenhouse gases or powerful ozone depleters, or combinations of the above it is imperative, that the extent, location and chemical composition of these residues are quantified and understood. This will enable their impact on the environment, economy and society, the three pillars of sustainable development  to be assessed. In this study small pieces of silicon were placed at predetermined points within the source chamber of a commercial ion implantation system. Antimony was then run using SbF3 as the feed gas. At the end of the run the silicon samples were retrieved and analysed using Rutherford Backscattering (RBS) and ion channelling. It was found that the location of the samples influenced the elemental composition of the plasma products deposited in the source chamber. A similar experiment was also conducted for BF2+ implants using a BF3 feed gas, again the elemental composition varied with the position of the silicon samples allowing the distribution of different elements, within the plasma products, to be mapped around the source chamber.
|Item Type:||Conference or Workshop Item (UNSPECIFIED)|
|Uncontrolled Keywords:||Science & Technology, Technology, Physical Sciences, Engineering, Manufacturing, Engineering, Electrical & Electronic, Physics, Applied, Physics, Condensed Matter, Engineering, Physics, ion implantation, plasma products, implant residues, plasma-dopant interactions, Rutherford Backscattering (RBS), Sb implantation, B implantation, silicon|
|Divisions:||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre|
|Depositing User:||Mr Adam Field|
|Date Deposited:||27 May 2010 14:39|
|Last Modified:||23 Sep 2013 18:32|
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