In depth resolved analysis of SIMOX materials by optical characterization techniques
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Pérez-Rodríguez, A., Martín, E., Samitier, J., Jiménez, J., Morante, J. R., Hemment, P. L. F. and Homewood, K. P. (1991) In depth resolved analysis of SIMOX materials by optical characterization techniques Proceedings of the IEEE International SOI Conference, 1991 . pp. 110-111.
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Abstract
Beveled SIMOX (separation by implanted oxygen) samples obtained by different processes have been analyzed by Raman scattering and Fourier transform infrared (FTIR) reflection-absorption spectroscopy techniques. In both cases, measurements have been made with a microscope, which made it possible to directly observe the different regions of the silicon and buried oxide layers on the structures. Micro-Raman measurements performed with an excitation wavelength of 457.9 nm (penetration depth of about 300 nm) show the existence of structural differences in the Si regions of the different samples, related to the technological processes. The structural characterization of the buried oxides has been carried out by infrared (IR) microscope reflection measurements. A comparison of the characteristics of the TO3-LO3 and TO4-LO4 vibrational peaks in the IR spectra gives information about the structural characteristics of the oxides
| Item Type: | Article |
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| Additional Information: | Perez-Rodriguez, A., Martin, E., Samitier, J., Jimenez, J., Morante, J.R., Hemment, P.L.F. , & Homewood, K.P. (1991). In depth resolved analysis of SIMOX materials by optical characterization techniques. Proceedings of the IEEE International SOI Conference, 1991 (1-3 Oct. 1991), pp. 110-111. © 1991 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. |
| Divisions: | Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre |
| ID Code: | 1253 |
| Deposited By: | Mr Adam Field |
| Deposited On: | 27 May 2010 15:39 |
| Last Modified: | 26 Oct 2012 16:27 |
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