Role of oxygen on the implantation related residual defects in silicon
Jianqing, Wen, Evans-Freeman, J., Peaker, A. R., Zhang, J. P., Hemment, Peter L. F., Marsh, C. D. and Booker, G. R. (2000) Role of oxygen on the implantation related residual defects in silicon IEEE Proceedings of Electron Devices Meeting, Hong Kong, 2000.. pp. 112-115.
The role of oxygen concentration on the formation/evolution of residual defects in implanted and rapid thermal annealed silicon was studied in samples with various oxygen concentrations. Photoluminescence (PL) study showed a strong correlation between the D-line intensity and the oxygen concentration. Transmission electron microscopy (TEM) measurements also suggested the extended defects were more favored in the high oxygen sample. High frequency capacitance-voltage (C-V) measurements revealed excess acceptors that were further investigated by deep level transient spectroscopy (DLTS). A hole trap with activation energy of 450 meV was detected and was suggested to relate to agglomerations of point defects associated with more than one type of 3D-metal related deep levels.
|Additional Information:||Jianqing Wen; Evans-Freeman, J.; Peaker, A.R.; Zhang, J.P.; Hemment, P.L.F.; Marsh, C.D.; Booker, G.R.; Role of oxygen on the implantation related residual defects in silicon. IEEE Proceedings of Electron Devices Meeting, Hong Kong, 2000. 112 - 115 © 2000 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.|
|Divisions:||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre|
|Depositing User:||Mr Adam Field|
|Date Deposited:||27 May 2010 14:39|
|Last Modified:||23 Sep 2013 18:31|
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