Boron Bromide as a Source Precursor for Low Energy Applications
Gwilliam, R (2002) Boron Bromide as a Source Precursor for Low Energy Applications In: SCS 2003. International Symposium on Signals, Circuits and Systems. Proceedings (Cat. No.03EX720).
The use of boron tri-bromide as a source precursor for low energy boron implantation is studied in this work. Details of gas delivery system, beam purity and running performance have been investigated for a 75keV molecular implant to give an equivalent boron energy of 5keV. The behavior of the Br during thermal processing is compared to that of F derived from a BF2 implant and is seen to be less mobile during post implant rapid thermal annealing with implications to gate oxide performance.
|Item Type:||Conference or Workshop Item (UNSPECIFIED)|
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre|
|Date :||1 January 2002|
|Identification Number :||https://doi.org/10.1109/IIT.2002.1258023|
|Additional Information :||Gwilliam, R. (2002). Boron Bromide as a Source Precursor for Low Energy Applications. Proceedings of 14th International Conference on Ion Implantation Technology, pp. 395-398. © 2002 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.|
|Depositing User :||Mr Adam Field|
|Date Deposited :||27 May 2010 14:39|
|Last Modified :||23 Sep 2013 18:31|
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