High Performance Transistors in Low Mobility Organic Semiconductors for Analog and High-Frequency Applications
Guo, Xiaojun, Balon, Frantisek, Hatton, Ross A and Shannon, J M (2008) High Performance Transistors in Low Mobility Organic Semiconductors for Analog and High-Frequency Applications In: 2008 Flexible Electronics and Displays Conference and Exhibition.
In conventional organic field-effect transistors (OFETs), the low mobility of carriers in the organic semiconductor layers leads to low device speed, which seriously limits the applicability of the devices for analog and high frequency circuits in high performance applications. In this paper, the source-gated transistor (SGT) concept is introduced for high performance transistors in low mobility organic semiconductors, in which the source comprises a potential barrier to current flow and a gate is used to modulate the electric field at the reverse-biased source barrier and change the current. Compared to the OFET, the OSGT has a much smaller susceptibility to short-channel effects, and can be operated with much higher internal electrical fields giving high drive current and high speed. The numerical simulation results show that the OSGT can be an excellent candidate for designing high performance transistors in low-mobility organic materials for analog and high frequency applications.
|Item Type:||Conference or Workshop Item (UNSPECIFIED)|
|Additional Information:||Guo, X., Balon, F., Hatton, R. A., and Shannon, J. M. (2008) High Performance Transistors in Low Mobility Organic Semiconductors for Analog and High-Frequency Applications. Flexible Electronics and Displays Conference and Exhibition 2008: Proceedings, pp. 1-5. ©2008 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.|
|Divisions:||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Nano-Electronics Centre|
|Deposited By:||Mr Adam Field|
|Deposited On:||27 May 2010 15:39|
|Last Modified:||26 Oct 2012 16:22|
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