Improved efficiency in hydrogenated amorphous silicon solar cells irradiated by excimer laser
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Damitha, AA, Adikaari, T, Silva, SRP, Kearney, MJ, Shannon, JM, Durstock, M, Friedman, D, Gaudiana, R and Rockett, A (2005) Improved efficiency in hydrogenated amorphous silicon solar cells irradiated by excimer laser In: Symposium on Materials for Photovoltaics held at the Fall Meeting of the MRS, 2004-11-29 - 2004-12-02, Boston, MA.
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Abstract
Excimer laser crystallisation is used to fabricate nanocrystalline thin film silicon Schottky barrier solar cells, in a superstrate configuration with indium tin oxide as the front contact and chromium as the back contact. 150 nm thick intrinsic absorber layers are used for the solar cells, and was crystallised using an excimer laser with different laser energy densities. These layers were characterised using Raman spectroscopy and optical absorption before device fabrication. External quantum efficiencies of the devices were calculated from the spectral response data of the devices. A maximum efficiency of 70 % is observed for low energy irradiation, which is significant for very thin absorber layers. Device operation is discussed with proposed band structures for the devices and supplementary measurements.
| Item Type: | Conference or Workshop Item (UNSPECIFIED) |
|---|---|
| Uncontrolled Keywords: | Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Materials Science, Multidisciplinary, Optics, Engineering, Materials Science, THIN-FILM TRANSISTORS, CRYSTALLIZATION, TEMPERATURE |
| Divisions: | Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Nano-Electronics Centre |
| Related URLs: | |
| ID Code: | 1239 |
| Deposited By: | Mr Adam Field |
| Deposited On: | 27 May 2010 15:39 |
| Last Modified: | 16 Feb 2013 15:20 |
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