Thermal Processing Effects in Proton-Isolated N-Type GaAs Devices
Ahmed, S, Amirov, K, Larsson, U, Too, P, Sealy, B J and Gwilliam, R (2003) Thermal Processing Effects in Proton-Isolated N-Type GaAs Devices In: The 11th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications, 2003. EDMO 2003..
In this paper we present the results of two new experiments (1) Infrared Reflectivity (IR) measurements of the thickness of the modified layers following the proton implantation in n-type GaAs layers at various implant temperatures and (2) a detailed study of the thermal stability of n-type GaAs layers isolated by proton implantation. It is found that the threshold dose (minimum implant dose required for a maximum sheet resistivity) for a device is a key parameter to obtain good thermal stability. The optical properties also depend on the implantation temperature and dose.
|Item Type:||Conference or Workshop Item (UNSPECIFIED)|
|Additional Information:||Ahmed, S., Amirov, K., Larsson, U., Too, P., Sealy, B. J., and Gwilliam, R. (2003) Thermal Processing Effects in Proton-Isolated N-Type GaAs Devices. 11th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications, pp. 210-216. ©2003 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.|
|Divisions:||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre|
|Depositing User:||Mr Adam Field|
|Date Deposited:||27 May 2010 14:39|
|Last Modified:||23 Sep 2013 18:31|
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