Absolute dose performance of the SWIFT single wafer ion implanter
Claudio, G, Boudreault, G, Jeynes, C, Sealy, BJ, Low, R, Brown, B, Alford, TL, Nastasi, M and Vella, MC (2003) Absolute dose performance of the SWIFT single wafer ion implanter In: 14th International Conference on Ion Implantation Technology, 2002-09-18 - 2002-09-27, TAOS, NM.
The characteristics of a new high performance implanter ("SWIFT") manufactured by Applied Materials include high accuracy implantation angle control, minimal energy spread [and uniformity and repeatability of dose [<0.5%] at various beam incident angles up to 60 degrees from normal. The latter is achieved using beam current monitoring equipment designed to measure absolute dose. It should be mentioned that although repeatability is much more important than absolute accuracy in implanter dosimetry, absolute accuracy is very convenient, making cross-machine comparisons, the establishment of new processes and day to day validation of different processes much easier. Four silicon wafers implanted by SWIFT at about 5*10(15) As/cm(2) were analysed by Rutherford backscattering spectrometry in order to characterise the absolute dosimetry of this implanter with an accuracy of 1.6% traceable to the international standard of weight in Paris. Repeatability and internal consistency of the RBS could be demonstrated at the 1% level consistent with the expected statistical and other errors. We could also find no significant error in the implanter dosimetry.
|Item Type:||Conference or Workshop Item (UNSPECIFIED)|
|Uncontrolled Keywords:||Science & Technology, Technology, Physical Sciences, Engineering, Manufacturing, Engineering, Electrical & Electronic, Physics, Applied, Physics, Condensed Matter, Engineering, Physics, RBS, SILICON|
|Divisions:||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre|
|Depositing User:||Mr Adam Field|
|Date Deposited:||27 May 2010 14:38|
|Last Modified:||23 Sep 2013 18:31|
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