Implant Isolation of Both n-Type InP and InGaAs by Iron Irradiation: Effect of Post-Implant Annealing Temperature
Too, P, Ahmed, S, Jakiela, R, Barcz, A, Kozanecki, A, Sealy, B J and Gwilliam, R (2003) Implant Isolation of Both n-Type InP and InGaAs by Iron Irradiation: Effect of Post-Implant Annealing Temperature In: The 11th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications, 2003. EDMO 2003..
1 MeV Fe+ was implanted into n-type InP and InGaAs layers at different substrate temperatures, -196degreesC, room temperature (RT), 100degreesC and 200degreesC to obtain high-resistivity regions. The sheet resistivity of the InP and InGaAs epilayers; grown on semi-insulating (SI) InP substrates was measured as a function of substrate temperature and post-implantation annealing temperature (100 - 800degreesC). For InP, a maximum sheet resistivity of similar to1x10(7) Omega/rectangle was achieved for samples implanted at -196degreesC, RT and 100degreesC after annealing at 400degreesC. For InGaAs samples, a maximum sheet resistivity of 1x10(7) and 2.3x10(6) Omega/rectangle is obtained for -196degreesC and RT implants respectively after annealing at 650degreesC for 60s. In both InP and InGaAs, the isolated regions exhibit good stability to heat treatment up to 500degreesC for all cases irrespective of the irradiation temperature. The iron depth profile obtained by secondary ion mass spectrometry (SIMS) shows that iron does not diffuse up to an annealing temperature of 550degreesC in both InP and InGaAs for all implantation temperatures. These results are novel since high sheet resistivity (similar to5x10(6) Omega/rectangle) is obtained in both InP and InGaAs samples implanted at -196degrees and RT, and annealed at 400degreesC. These data demonstrate the potential usefulness of iron implantation for isolation of InP/InGaAs based devices.
|Item Type:||Conference or Workshop Item (UNSPECIFIED)|
|Additional Information:||Too, P., Ahmed, S., Jakiela, R., Barcz, A., Kozanecki, A., Sealy, B. J., and Gwilliam, R. (2003) Implant Isolation of Both n-Type InP and InGaAs by Iron Irradiation: Effect of Post-Implant Annealing Temperature. 11th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications, pp. 18-23 ©2003 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.|
|Divisions:||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre|
|Depositing User:||Mr Adam Field|
|Date Deposited:||27 May 2010 14:38|
|Last Modified:||23 Sep 2013 18:31|
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