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Understanding, modeling and optimizing vacancy engineering for stable highly boron-doped ultrashallow junctions

Cowern, NEB, Smith, AJ, Colombeau, B, Gwilliam, R, Sealy, BJ and Collart, EJH (2005) Understanding, modeling and optimizing vacancy engineering for stable highly boron-doped ultrashallow junctions In: IEEE International Electron Devices Meeting, 2005-12-05 - 2005-12-07, Washington, DC.

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Item Type: Conference or Workshop Item (UNSPECIFIED)
Uncontrolled Keywords: Science & Technology, Technology, Computer Science, Hardware & Architecture, Engineering, Electrical & Electronic, Computer Science, Engineering, SILICON, SI
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Divisions: Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre
Depositing User: Mr Adam Field
Date Deposited: 27 May 2010 14:38
Last Modified: 09 Jun 2014 13:27
URI: http://epubs.surrey.ac.uk/id/eprint/1218

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