Understanding, modeling and optimizing vacancy engineering for stable highly boron-doped ultrashallow junctions
Cowern, NEB, Smith, AJ, Colombeau, B, Gwilliam, R, Sealy, BJ and Collart, EJH (2005) Understanding, modeling and optimizing vacancy engineering for stable highly boron-doped ultrashallow junctions In: IEEE International Electron Devices Meeting, 2005-12-05 - 2005-12-07, Washington, DC.
This work presents breakthrough results on the physics, modeling and application of ion-implanted vacancies for high-performance B-doped ultrashallow junctions. We demonstrate for the first time electrically active B concentrations approaching 10(21)/cm(3), achieved by low-temperature annealing, without preamorphisation. Source/drain (S/D) junctions formed by advanced vacancy engineering implants (VEI) are activated far above solubility, are stable with respect to deactivation, and are practically diffusion less. Furthermore sheet resistance R, is predicted to stay almost constant with decreasing junction depth X-j, outperforming other S/D engineering approaches beyond the 45 nm node.
|Item Type:||Conference or Workshop Item (UNSPECIFIED)|
|Uncontrolled Keywords:||Science & Technology, Technology, Computer Science, Hardware & Architecture, Engineering, Electrical & Electronic, Computer Science, Engineering, SILICON, SI|
|Divisions:||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre|
|Deposited By:||Mr Adam Field|
|Deposited On:||27 May 2010 15:38|
|Last Modified:||16 Feb 2013 16:13|
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