Source-Gated Transistors for Thin Film Electronics
Shannon, J M and Balon, F (2004) Source-Gated Transistors for Thin Film Electronics In: Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850).
A new form of thin film transistor named the source-gated transistor (SGT) is described. The current is determined by a source barrier located opposite a gate that controls the effective source barrier height. The SGT has several advantages compared with a standard FET These include a much lower saturation voltage, higher output impedance and in the case of amorphous silicon, a much better stability.
|Item Type:||Conference or Workshop Item (UNSPECIFIED)|
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Nano-Electronics Centre|
|Date :||1 January 2004|
|Identification Number :||https://doi.org/10.1109/ESSDER.2004.1356504|
|Additional Information :||Shannon, J. M., and Balon, F. (2004) Source-Gated Transistors for Thin Film Electronics. Proceedings of the 34th European Solid-State Device Research Conference, pp. 125-127. ©2004 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.|
|Depositing User :||Mr Adam Field|
|Date Deposited :||27 May 2010 14:38|
|Last Modified :||23 Sep 2013 18:31|
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