Band anticrossing in GaNxSb1-x
Jefferson, PH, Veal, TD, Piper, LFJ, Bennett, BR, McConville, CF, Murdin, BN, Buckle, L, Smith, GW and Ashley, T (2006) Band anticrossing in GaNxSb1-x APPL PHYS LETT, 89 (11), 111921. ? - ?.
Fourier transform infrared absorption measurements are presented from the dilute nitride semiconductor GaNSb with nitrogen incorporations between 0.2% and 1.0%. The divergence of transitions from the valence band to E- and E+ can be seen with increasing nitrogen incorporation, consistent with theoretical predictions. The GaNSb band structure has been modeled using a five-band k center dot p Hamiltonian and a band anticrossing fitting has been obtained using a nitrogen level of 0.78 eV above the valence band maximum and a coupling parameter of 2.6 eV.
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics
Faculty of Engineering and Physical Sciences > Physics
|Date :||11 September 2006|
|Identification Number :||10.1063/1.2349832|
|Uncontrolled Keywords :||ALLOYS, SEMICONDUCTORS, PHOTOLUMINESCENCE, PARAMETERS, ABSORPTION, REDUCTION, GANASSB, GROWTH, GANSB|
|Additional Information :||Published in <i>Applied Physics Letters,</i> Vol. 89, Iss. 11. Copyright American Institute of Physics. Click <a href=http://apl.aip.org/>here</a> to access the journal's website.|
|Depositing User :||Mr Adam Field|
|Date Deposited :||27 May 2010 14:06|
|Last Modified :||23 Sep 2013 18:26|
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