Band anticrossing in GaNxSb1-x
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Jefferson, PH, Veal, TD, Piper, LFJ, Bennett, BR, McConville, CF, Murdin, BN, Buckle, L, Smith, GW and Ashley, T (2006) Band anticrossing in GaNxSb1-x APPL PHYS LETT, 89 (11). ? - ?. ISSN 0003-6951
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Abstract
Fourier transform infrared absorption measurements are presented from the dilute nitride semiconductor GaNSb with nitrogen incorporations between 0.2% and 1.0%. The divergence of transitions from the valence band to E- and E+ can be seen with increasing nitrogen incorporation, consistent with theoretical predictions. The GaNSb band structure has been modeled using a five-band k center dot p Hamiltonian and a band anticrossing fitting has been obtained using a nitrogen level of 0.78 eV above the valence band maximum and a coupling parameter of 2.6 eV.
| Item Type: | Article |
|---|---|
| Additional Information: | Published in <i>Applied Physics Letters,</i> Vol. 89, Iss. 11. Copyright American Institute of Physics. Click <a href=http://apl.aip.org/>here</a> to access the journal's website. |
| Uncontrolled Keywords: | ALLOYS, SEMICONDUCTORS, PHOTOLUMINESCENCE, PARAMETERS, ABSORPTION, REDUCTION, GANASSB, GROWTH, GANSB |
| Divisions: | Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics Faculty of Engineering and Physical Sciences > Physics |
| ID Code: | 121 |
| Deposited By: | Mr Adam Field |
| Deposited On: | 27 May 2010 15:06 |
| Last Modified: | 25 Apr 2013 12:43 |
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