All-optical transistor action in photonic band gap materials
Florescu, M and John, S (2002) All-optical transistor action in photonic band gap materials In: 5th International Conference on Applications of Photonic Technology (ICAPT 2002), 2002-06-01 - 2002-06-06, QUEBEC CITY, CANADA.
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We describe all-optical transistor action in photonic band gap materials doped with active atoms. In the presence of a photonic band gap (PBG) material, a coherent laser beam with the frequency slightly detuned from the resonant atomic transition frequency can drive a collection of two-level atoms to an almost totally inverted state, a phenomenon strictly forbidden in ordinary vacuum. By changing the laser eld intensity in the neighborhood of a threshold value, it is possible to drive the atomic system through a transition from states in which the atoms populate preferentially the ground level to almost totally inverted states. In this process, the atomic system switches from a passive medium (highly absorptive) to a active medium (highly amplifying). The switching action in a PBG material is not associated with operating near a narrow cavity resonance with conventional trade-o between switching time and switching threshold intensity. Rather it is associated with an abrupt discontinuity in the engineered broad band electromagnetic density of states of the PBG material. We demonstrate all-optical transistor action in PBG materials by analyzing the absorption spectrum of a second probe laser beam and we show that the probe beam experience a substantial di erential gain by slight intensity modulations in the control laser eld.
|Item Type:||Conference or Workshop Item (Paper)|
|Additional Information:||Copyright 2002 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.
Florescu M, John S All-optical transistor action in photonic band gap materials 5th International Conference on Applications of Photonic Technology (ICAPT 2002), QUEBEC CITY, CANADA, 01 Jun 2002 - 06 Jun 2002. Editors: Lessard RA, Lampropoulos GA, Schinn GW. APPLICATIONS OF PHOTONIC TECHNOLOGY 5. SPIE-INT SOC OPTICAL ENGINEERING. 4833: 513-524. 2002 DOI: 10.1117/12.474416
|Uncontrolled Keywords:||all-optical transistor, all-optical switching, photonic band gap materials, collective atomic switching, resonance fluorescence, SPONTANEOUS EMISSION, CRYSTALS, ATOMS, EDGE, WAVELENGTHS, ABSORPTION, INVERSION, SYSTEMS|
|Divisions:||Faculty of Engineering and Physical Sciences > Physics|
|Depositing User:||Symplectic Elements|
|Date Deposited:||02 Feb 2012 10:28|
|Last Modified:||23 Sep 2013 18:59|
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