Carrier recombination in 1.3 mu m GaAsSb/GaAs quantum well lasers
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Hild, K, Sweeney, SJ, Wright, S, Lock, DA, Jin, SR, Marko, IP, Johnson, SR, Chaparro, SA, Yu, SQ and Zhang, YH (2006) Carrier recombination in 1.3 mu m GaAsSb/GaAs quantum well lasers APPL PHYS LETT, 89 (17). ? - ?. ISSN 0003-6951
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Official URL: http://dx.doi.org/10.1063/1.2369649
Abstract
In this letter the authors present a comprehensive study of the threshold current and its temperature dependence in GaAsSb-based quantum well edge-emitting lasers for emission at 1.3 mu m. It is found that at room temperature, the threshold current is dominated by nonradiative recombination accounting for more than 90% of the total threshold current density. From high hydrostatic pressure dependence measurements, a strong increase in threshold current with pressure is observed, suggesting that the nonradiative recombination process may be attributed to electron overflow into the GaAs/GaAsP barrier layers and, to a lesser extent, to Auger recombination. (c) 2006 American Institute of Physics.
| Item Type: | Article |
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| Additional Information: | Copyright 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 89 (17) 173509 and may be found at K. Hild et al., Appl. Phys.Lett. 89, 173509 (2006) |
| Uncontrolled Keywords: | SEMICONDUCTOR DIODE-LASERS, PRESSURE-DEPENDENCE, DOT LASERS, BAND OFFSETS, BOUND-STATES, OPERATION |
| Divisions: | Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute |
| ID Code: | 104830 |
| Deposited By: | Mr Adam Field |
| Deposited On: | 13 Jan 2012 15:06 |
| Last Modified: | 30 Apr 2012 14:33 |
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