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Carrier recombination in 1.3 mu m GaAsSb/GaAs quantum well lasers

Hild, K, Sweeney, SJ, Wright, S, Lock, DA, Jin, SR, Marko, IP, Johnson, SR, Chaparro, SA, Yu, S-Q and Zhang, Y-H (2006) Carrier recombination in 1.3 mu m GaAsSb/GaAs quantum well lasers APPLIED PHYSICS LETTERS, 89 (17). ? - ?. ISSN 0003-6951

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Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics
Authors :
AuthorsEmail
Hild, KUNSPECIFIED
Sweeney, SJUNSPECIFIED
Wright, SUNSPECIFIED
Lock, DAUNSPECIFIED
Jin, SRUNSPECIFIED
Marko, IPUNSPECIFIED
Johnson, SRUNSPECIFIED
Chaparro, SAUNSPECIFIED
Yu, S-QUNSPECIFIED
Zhang, Y-HUNSPECIFIED
Date : 23 October 2006
Identification Number : 10.1063/1.2369649
Uncontrolled Keywords : Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, SEMICONDUCTOR DIODE-LASERS, PRESSURE-DEPENDENCE, DOT LASERS, BAND OFFSETS, BOUND-STATES, OPERATION
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Additional Information :

Copyright 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

The following article appeared in Applied Physics Letters, 89 (17) 173509 and may be found at K. Hild et al., Appl. Phys.Lett. 89, 173509 (2006)

Depositing User : Mr Adam Field
Date Deposited : 13 Jan 2012 15:06
Last Modified : 17 Jun 2015 13:33
URI: http://epubs.surrey.ac.uk/id/eprint/104830

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