Band-structure and gain-cavity tuning of 2.4-μm GaSb buried tunnel junction VCSELs
Marko, IP, Ikyo, AB, Adams, AR, Sweeney, SJ, Bachmann, A, Kashani-Shirazi, K and Amann, M-C (2009) Band-structure and gain-cavity tuning of 2.4-μm GaSb buried tunnel junction VCSELs Proceedings of European Conference on Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference.
GaSb_VCSEL final marko.pdf
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Low-cost, continuous-wave GaSb-based vertical cavity surface emitting lasers (VCSELs) operating at ~ 2.4 mum up to 50degC have been demonstrated recently. In this work we have used high pressure techniques to investigate ways to improve their performance and extend their working temperature range. Since the band-gap and energy of the gain peak (Ep) increase with pressure at 0.126 meV/MPa at constant temperature, when applied to edge emitting lasers (EEL) we can use pressure to determine the radiative and non-radiative recombination processes occurring. In the VCSEL the pressure dependence of the threshold current, is much more complicated. At the higher temperature the decreasing Auger recombination initially dominates. Therefore we predict that either increasing the band gap or increasing the operating wavelength will allow an improved temperature performance of these GaSb-based VCSELs.
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|Divisions:||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics|
|Depositing User:||Symplectic Elements|
|Date Deposited:||08 Mar 2012 15:26|
|Last Modified:||23 Sep 2013 18:58|
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