Comparison of the x-ray spectroscopy response and charge transport properties of semi-insulating In/Al doped CdZnTe crystals
Xu, Y, Sellin, PJ, Lohstroh, A, Jie, W, Wang, T, Mills, C, Veeramani, P and Veale, M (2009) Comparison of the x-ray spectroscopy response and charge transport properties of semi-insulating In/Al doped CdZnTe crystals JOURNAL OF APPLIED PHYSICS, 105 (8). ? - ?. ISSN 0021-8979
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Official URL: http://dx.doi.org/10.1063/1.3097301
Copyright 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
The following article appeared in Journal of Applied Physics, 105 (8) 083101 and may be found at Y. Xu et al., J. Appl. Phys. 105, 083101 (2009)
|Uncontrolled Keywords:||Science & Technology, Physical Sciences, Physics, Applied, Physics, aluminium, cadmium compounds, carrier lifetime, deep levels, electron mobility, electron traps, II-VI semiconductors, impurity scattering, indium, interstitials, semiconductor doping, X-ray spectra, zinc compounds, RADIATION DETECTORS, MOBILITY, CDTE|
|Divisions:||Faculty of Engineering and Physical Sciences > Physics|
|Deposited By:||Symplectic Elements|
|Deposited On:||13 Jan 2012 15:09|
|Last Modified:||01 Apr 2013 14:57|
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